Crystal structure and defects in Czochralski-grown LiCaAlF6

Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers

In this study, we investigate the nature of some recombination active defects limiting the lifetime in Czochralski (CZ) silicon wafers, in the millisecond range. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use lifetime spectroscopy combine with several anne...

Thermal stress reduction for a Czochralski grown single crystal

In this paper an optimal control approach for thermal stress reduction inside a Czochralski grown single crystal is presented. Using the lateral heat flux as a control variable, an optimal control formulation for minimizing thermal stress with a given crystal shape is derived. Since thermal stress is also affected by the lateral shape of crystals during growth, the level of the stress can be re...

Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

Luminescence and scintillation characterization of Silver doped KCl single crystal grown by Czochralski technique for photonic applications

In this study, the scintillation and optical properties of pure and silver doped potassium chloride (KCl:Ag) single crystals were reported. Pure and doped KCl bulk single crystals with a good optical quality and free from cracks were grown from the melt using Czochralski technique. Different analysis methods were used to study the optical and scintillation properties of the grown crystals. The ...

Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon

The effect of stress (exerted by hydrostatic pressure of argon ambient enhanced up to 1.2 GPa) on the creation of oxygen-related defects in annealed Czochralski grown silicon (Cz-Si) was investigated. Concentrations of oxygen interstitials and of dislocations in Cz-Si samples with before-created nucleation centres for oxygen precipitation were markedly lower after pressure treatment at 1120 to ...